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| Ordering number : ENN8016 2SK3833 2SK3833 Features * * * * * N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1. VDD=20V, L=100H, IAV=48A *2. L100H, 1 Pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 100 20 48 192 2.5 85 150 --55 to +150 144 48 Unit V V A A W W C C mJ A Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=100V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=24A ID=24A, VGS=10V ID=24A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 1.2 20 33 26 31 4200 300 250 34 43 Conditions Ratings min 100 1 10 2.6 typ max Unit V A A V S m m pF pF pF Marking : K3833 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21405QA TS IM TB-00000314 No.8016-1/4 2SK3833 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=50V, VGS=10V, ID=48A VDS=50V, VGS=10V, ID=48A VDS=50V, VGS=10V, ID=48A IS=48A, VGS=0 Ratings min typ 30 72 285 105 79 14 18 1.04 1.5 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 2056A 15.6 14.0 3.2 4.8 2.0 Switching Time Test Circuit VIN VDD=50V 3.5 10V 0V VIN ID=24A RL=2.1 2.6 1.2 15.0 20.0 D PW=10s D.C.1% VOUT 1.3 1.6 G 20.0 0.6 2.0 2SK3833 P.G 50 1.0 1 0.6 2 3 1.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB S 5.45 5.45 Unclamped Inductive Circuit 50 RG L DUT 15V 0V 50 VDD 90 80 70 ID -- VDS Tc=25C 90 ID -- VGS 25C Tc= -0 0.5 1.0 1.5 2.0 2.5 Drain Current, ID -- A Drain Current, ID -- A 60 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 60 50 40 30 20 C 10 0 25 75 VGS=3.0V C Tc= --25 3.0 C 3.5 4.0 25 4.5 5.0 Drain-to-Source Voltage, VDS -- V IT07721 Gate-to-Source Voltage, VGS -- V No.8016-2/4 C IT07722 4.0V 70 75 C 8. 0V 10V 6.0 V VDS=10V 80 2SK3833 70 RDS(on) -- VGS ID=24A 80 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 60 70 60 50 40 30 20 10 0 --50 50 40 Tc=75C 30 25C --25C 24 I D= A =4V V GS , 20 24 I D= A =10 V GS , V 10 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID IT07723 100 7 5 3 2 Case Temperature, Tc -- C IT07724 IF -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 7 5 VDS=10V C 2 10 7 5 3 2 1.0 7 5 0.1 25 Forward Current, IF -- A 3 Tc C 5 --2 = 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.3 0.6 0.9 1.2 IT07726 C 25C 40 2 3 5 7 1.0 2 3 5 7 10 2 3 10000 7 5 Ciss, Coss, Crss -- VDS f=1MHz Drain Current, ID -- A 5 7 100 IT07725 10 9.0 Diode Forward Voltage, VSD -- V VGS -- Qg VDS=50V ID=48A Ciss Gate-to-Source Voltage, VGS -- V 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 Ciss, Coss, Crss -- pF 3 2 1000 7 5 3 2 100 0 5 10 15 20 25 30 IT7727 Coss Crss 0 0 10 20 30 50 60 70 80 Drain-to-Source Voltage, VDS -- V 1000 7 Total Gate Charge, Qg -- nC 5 Tc=7 5 --25 C 75 C IT07728 SW Time -- ID VDD=50V VGS=10V td(off) ASO IDP=192A ID=48A 10 op 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 <10s Switching Time, SW Time -- ns 5 3 2 10 10 0m tio 10 s Drain Current, ID -- A 1m ms 0 s s tf 100 7 5 3 2 DC s tr Operation in this area is limited by RDS(on). Tc=25C Single pulse 2 3 5 7 1.0 2 3 era n td(on) 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 100 IT07729 0.1 0.1 5 7 10 2 3 5 7 100 2 Drain-to-Source Voltage, VDS -- V IT07730 No.8016-3/4 2SK3833 3.0 PD -- Ta Allowable Power Dissipation, PD -- W 100 90 85 80 70 60 50 40 30 20 10 0 0 20 40 PD -- Tc Allowable Power Dissipation, PD -- W 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT07732 Case Temperature, Tc -- C IT07731 Note on usage : Since the 2SK3833 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS No.8016-4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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